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| Power F-MOS FETs 2SK2125 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 15.6mJ q VGSS = 30V guaranteed q High-speed switching: tf = 35ns q No secondary breakdown unit: mm 4.60.2 3.20.1 9.90.3 2.90.2 s Applications 4.10.2 8.00.2 Solder Dip 13.7-0.2 q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply 15.00.3 3.00.2 +0.5 1.20.15 1.450.15 0.750.1 2.540.2 5.080.4 2.60.1 0.70.1 s Absolute Maximum Ratings (TC = 25C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP EAS* PD Tch Tstg Ratings 500 30 2.5 10 15.6 40 2 150 -55 to +150 Unit V V A A mJ W C C 7 123 1: Gate 2: Drain 3: Source TO-220E Package Avalanche energy capacity Allowable power dissipation Channel temperature Storage temperature * TC = 25C Ta = 25C L = 5mH, IL = 2.5A, VDD = 50V, 1 pulse s Electrical Characteristics (TC = 25C) Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance Diode forward voltage Symbol IDSS IGSS VDSS Vth RDS(on) | Yfs | VDSF Coss td(on) tr tf td(off) Rth(ch-c) VGS = 10V, ID = 1.5A VDD = 150V, RL = 100 Conditions VDS = 400V, VGS = 0 VGS = 30V, VDS = 0 ID = 1mA, VGS = 0 VDS = 25V, ID = 1mA VGS = 10V, ID = 1.5A VDS = 25V, ID = 1.5A IDR = 2.5A, VGS = 0 330 VDS = 20V, VGS = 0, f = 1MHz 55 20 15 25 30 55 3.125 1 500 2 3.2 1.5 -1.5 5 4 min typ max 0.1 1 Unit mA A V V S V pF pF pF ns ns ns ns C/W Input capacitance (Common Source) Ciss Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Crss Turn-on time (delay time) Rise time Fall time Turn-off time (delay time) Thermal resistance between channel and case 1 Power F-MOS FETs Area of safe operation (ASO) 50 10 2SK2125 PD Ta 24 EAS Tj Avalanche energy capacity EAS (mJ) VDD=50V ID=2.5A 20 IDP 100s Allowable power dissipation PD (W) t=10s (1) TC=Ta (2) Without heat sink (PD=2W) 40 Drain current ID (A) 3 ID 1ms 1 10ms 100ms 0.3 DC 0.1 16 30 (1) 12 20 8 10 (2) 0 0 20 40 60 80 100 120 140 160 4 Non repetitive pulse TC=25C 10 30 100 300 0 25 50 75 100 125 150 175 Drain to source voltage VDS (V) Ambient temperature Ta (C) Junction temperature Tj (C) ID VDS 4.0 TC=25C 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 10 20 30 40 50 60 6V VGS=10V 7V 6.5V 4 5 ID VGS 6 VDS=25V Vth TC VDS=25V ID=1mA 5 Drain current ID (A) Drain current ID (A) TC=0C 25C 3 150C 100C Gate threshold voltage Vth (V) 12 4 3 2 2 40W 5.5V 5V 1 1 0 0 2 4 6 8 10 0 0 25 50 75 100 125 150 Drain to source voltage VDS (V) Gate to source voltage VGS (V) Case temperature TC (C) RDS(on) ID Drain to source ON-resistance RDS(on) () 12 3.0 | Yfs | ID 100 VDS=25V TC=25C IDR VDSF VGS=0 TC=25C Forward transfer admittance |Yfs| (S) VGS=10V 10 Drain reverse current IDR (A) 0 1 2 3 4 5 2.5 10 8 TC=150C 6 100C 2.0 1.5 1 4 25C 0C 1.0 0.1 2 0.5 0 0 1 2 3 4 5 0 0.01 0 0.5 1.0 1.5 2.0 Drain current ID (A) Drain current ID (A) Diode forward voltage VDSF (V) 2 Power F-MOS FETs Ciss, Coss, Crss VDS Input capacitance (Common source), Output capacitance (Common source), Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF) 10000 f=1MHz TC=25C 2SK2125 VDS, VGS Qg 400 16 14 250V 12 10 8 VGS 6 4 2 VDS 0 24 150 td(on), tr, tf, td(off) ID VDD=150V VGS=10V TC=25C Drain to source voltage VDS (V) VDS=150V Gate to source voltage VGS (V) 350 300 250 200 150 100 50 0 0 4 8 Switching time td(on),tr,tf,td(off) (ns) 125 1000 Ciss 100 100 td(off) 75 Coss 10 Crss 50 tf tr td(on) 25 1 0 50 100 150 200 250 0 0 0.5 1.0 1.5 2.0 2.5 3.0 12 16 20 Drain to source voltage VDS (V) Gate charge amount Qg (nC) Drain current ID (A) Rth(t) t 102 Notes: Rth was measured at Ta=25C and under natural convection. (1) without heat sink (2) with a 100 x 100 x 2mm Al heat sink 10 d=1 0.5 1 0.1 tP 10-1 0.05 0.01 T tP T (1) Thermal resistance Rth(t) (C/W) (2) d= 10-2 10-4 10-3 10-2 10-1 1 10 102 103 Time t (s) 3 |
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